isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：309.48 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：361.14 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.51 Kbytes 頁數(shù)：2 Pages

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LH1263 E&M Signaling Circuit

文件：649.28 Kbytes 頁數(shù)：15 Pages

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