isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.51 Kbytes 頁數(shù)：2 Pages

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LH1263 E&M Signaling Circuit

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SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

APPLICATIONS: ? Load/Power Switches ? Power Supply Converter Circuits ? Battery Powered Portable Devices FEATURES: ? Power Dissipation: 125mW ? Low Package Profile: 0.4mm ? Low rDS(ON) ? Low Threshold Voltage ? Logic Level Compatibility ? Small SOT-923 Surface Mount Package DESCRIPT

文件：334.91 Kbytes 頁數(shù)：3 Pages

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