POWER MOS 7 R MOSFET

POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon

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MICROSEMI

美高森美

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionall

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

POWER MOS 7 R MOSFET

POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon

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MICROSEMI

美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? 500V 74.5A 0.050? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimize

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POWER MOS 7 R FREDFET

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MICROSEMI

美高森美

POWER MOS 7 R FREDFET

文件：155.94 Kbytes 頁數(shù)：5 Pages

MICROSEMI

美高森美

POWER MOS 7 MOSFET

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FREDFETs

ROHS

Microchip

微芯科技

MOSFET

Microchip

微芯科技