| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Identical Specific 文件：34.75 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | |
APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Iden 文件：38.12 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | |
APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | APT 晶科電子 | APT | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI? Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver 文件：36.23 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Identical Specific 文件：34.75 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Iden 文件：38.12 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：337.87 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI? Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers 文件：35.9 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI? Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver 文件：36.23 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Iden 文件：38.12 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW |
詳細(xì)參數(shù)
- 型號(hào)：
APT50M80
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
APTMICROSEMI |
22+ |
TO-247 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
APTMICROSEMI |
23+ |
TO-247 |
8400 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
APT |
23+ |
模塊 |
360 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
APT |
24+ |
8866 |
詢價(jià) | ||||
APT |
23+ |
模塊 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
APT |
24+ |
模塊 |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
APT |
24+ |
TO264 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
APT |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
APT |
24+ |
模塊 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) |
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