首頁(yè) >APT40GR120B>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
APT40GR120B | Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon 文件：2.83333 Mbytes 頁(yè)數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | |
APT40GR120B | Power Semiconductors Power Modules 文件：2.83336 Mbytes 頁(yè)數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | |
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon 文件：2.83333 Mbytes 頁(yè)數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon 文件：2.83333 Mbytes 頁(yè)數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes 頁(yè)數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes 頁(yè)數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
APT40GR120B | Package：TO-247-3；包裝：管件 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 88A 500W TO247 | MICROCHIP 微芯科技 | MICROCHIP | |
NPT IGBT & Trench IGBT ROHS | Microchip 微芯科技 | Microchip | ||
NPT IGBT & Trench IGBT The APT40GR120B2SCD10?Ultra Fast NPT - IGBT? is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT? offers superior ruggedness and ultrafast switching speed.FeaturesLow Saturation VoltageLow Tail CurrentShort Circuit Withstand RatedHigh Frequenc | Microchip 微芯科技 | Microchip | ||
Package：TO-247-3；包裝：管件 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 88A 500W TO247 | MICROCHIP 微芯科技 | MICROCHIP |
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
APT40GR120B
- 制造商：
Microchip Technology
- 類(lèi)別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝：
管件
- IGBT 類(lèi)型：
NPT
- 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：
3.2V @ 15V，40A
- 開(kāi)關(guān)能量：
1.38mJ（開(kāi)），906μJ（關(guān)）
- 輸入類(lèi)型：
標(biāo)準(zhǔn)
- 25°C 時(shí) Td（開(kāi)/關(guān)）值：
22ns/163ns
- 測(cè)試條件：
600V，40A，4.3 歐姆，15V
- 工作溫度：
-55°C ~ 150°C（TJ）
- 安裝類(lèi)型：
通孔
- 封裝/外殼：
TO-247-3
- 供應(yīng)商器件封裝：
TO-247-3
- 描述：
IGBT 1200V 88A 500W TO247
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
638 |
原裝正品 |
詢(xún)價(jià) | ||||
Microch |
20+ |
NA |
33560 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
Microsemi |
1942+ |
N/A |
717 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢(xún)價(jià) | ||
MICROSEMI |
25+ |
TO247-3 |
326 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
Microsemi Corporation |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
Microsemi Corporation |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢(xún)價(jià) | ||
MICROSEMI |
23+ |
2013+ |
7300 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
24+ |
N/A |
54000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
Microchip Technology |
25+ |
TO-247-3 |
9350 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) | ||
Microse |
23+ |
TO247 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) |
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