isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

Advanced Audio Processor System

文件：3.2917 Mbytes 頁數(shù)：194 Pages

AMSCO

艾邁斯歐司朗

SAW Components

Features ■ Package size 3.0 x 3.0 x 1.1 mm3 ■ Package code DCC6D ■ RoHS compatible ■ Approximate weight 0.037 g ■ Package for Surface Mount Technology (SMT) ■ Ni, gold-plated terminals ■ Lead free soldering compatible with J - STD20C ■ Electrostatic Sensitive Device (ESD) Application ■ L

文件：63.54 Kbytes 頁數(shù)：7 Pages

EPCOS

愛普科斯