isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：297.72 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

Fixed Attenuator Pads

Description The ATN3580 series of attenuator chips incorporate thin film resistors on high resistivity silicon chips to achieve precision attenuation, tight flatness and high return loss to 40 GHz. The design uses a balanced TEE resistive structure to assure broad bandwidth performance. The thin

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SKYWORKS

思佳訊

Integrated Wireless LAN Modules

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ROHM

羅姆