首頁 >APT30M85BVRG>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
APT30M85BVRG | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：337.7 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
APT30M85BVRG | Power Semiconductors Power Modules 文件：2.83336 Mbytes 頁數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | |
APT30M85BVRG | MOSFET ROHS | Microchip 微芯科技 | Microchip | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：69.45 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：64.8 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：69.45 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW |
詳細參數(shù)
- 型號：
APT30M85BVRG
- 功能描述：
MOSFET N-CH 300V 40A TO-247
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
POWER MOS V®
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
MICROSEMI |
25+ |
TO-247 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Microsemi Corporation |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
APT/MICROSEMI |
23+ |
TO-247 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
Microsemi Corporation |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
MICROCHIP |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
APT |
25+ |
TO-247B |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
MICRO |
24+ |
原廠封裝 |
65250 |
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持! |
詢價 | ||
Microchip Technology / Atmel |
25+ |
TO-247-3 |
6843 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
Microchip Technology / Atmel |
25+ |
TO-247-3 |
6895 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 |
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