| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
APT30M85 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：69.45 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | |
APT30M85 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：64.8 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：69.45 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：64.8 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：337.7 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor 文件：420.1 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes 頁數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
MOSFET ROHS | Microchip 微芯科技 | Microchip | ||
POWER MOS V 300V 40A 0.085 Ohm | APT 晶科電子 | APT |
詳細(xì)參數(shù)
- 型號：
APT30M85
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
8866 |
詢價(jià) | ||||
APT |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
APT |
24+ |
TO-247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!! |
詢價(jià) | ||
APT |
20+ |
TO-247 |
35830 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
MICROSEMI |
25+ |
TO-247 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
APT |
23+ |
TO247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Microsemi Corporation |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
APT/MICROSEMI |
23+ |
TO-247 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價(jià) |
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