Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP802 is Pb-free (meets ROHS & Sony 259 specifications). AOP802L is a Green Product order

文件：115.18 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體

Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美國萬代

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP802 is Pb-free (meets ROHS & Sony 259 specifications). AOP802L is a Green Product order

文件：115.18 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：309.46 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：360.92 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：297.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電