Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP802 is Pb-free (meets ROHS & Sony 259 specifications). AOP802L is a Green Product order

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AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電