N-Channel SDMOSTM POWER Transistor

General Description The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicati

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AOSMD

萬國半導(dǎo)體

N-Channel SDMOSTM Power Transistor

General Description The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicat

文件：161.27 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：318.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.0177 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

30V N-Channel MOSFET

General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent R DS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general pur

文件：363.94 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 55A@ TC=25℃ ? Drain Source Voltage- : VDSS=30V(Min) ? Static Drain-Source On-Resistance : RDS(on) =5.6mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot

文件：310.35 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Enhancement Mode Field Effect Transistor

文件：111.96 Kbytes 頁數(shù)：5 Pages

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N-Channel SDMOS? Power Transistor

General Description\nThe AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications VDS(V) = 30V\nID = 55A????????????? (VGS= 10V)\nRDS(ON)< 8m????? (VGS= 10V)\nRDS(ON) < 14m?? (VGS= 4.5V)100% UIS Tested!\n100% RgTested!\n?;

AOS

美國萬代

N-Channel SDMOSTM POWER Transistor

AOS

美國萬代