N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOD414L ( Green Product ) is offered in a lead-free package.

文件：452.95 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 85A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION · Motor Drive · DC-DC Converter · High Frequency Switching and Synchronous Rectification

文件：299.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.00137 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

文件：111.96 Kbytes 頁數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 43A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：318.01 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel SDMOSTM POWER Transistor

General Description The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicati

文件：202.25 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.71 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 20-V (D-S)175 C MOSFET

FEATURES ? TrenchFET Power MOSFET ? 175°C Maximum Junction Temperature ? 100 Rg Tested

文件：916.67 Kbytes 頁數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體