絲?。?a target="_blank" title="Marking" href="/40p30/marking.html">40P30；Package：TO-252-3L；P-Channel Enhancement Mode MOSFETl

Features Vos=-40V ID=-30 A ROS(ON)

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets

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AOSMD

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

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AOSMD

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

文件：117.47 Kbytes 頁數(shù)：5 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

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AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

文件：455.52 Kbytes 頁數(shù)：6 Pages

AOSMD

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40V P-Channel MOSFET

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AOSMD

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40V P-Channel MOSFET

文件：212.62 Kbytes 頁數(shù)：6 Pages

AOSMD

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包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET P-CH 40V TO252

Alpha \u0026 Omega Semiconductor Inc.