60V N-Channel MOSFET

General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro

文件：310.2 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD4132 is Pb-free (meets ROHS & Sony 259 specificat

文件：116.93 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體

絲印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 85A@ TC=25℃ ? Drain Source Voltage- : VDSS=30V(Min) ? Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot

文件：309.68 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.00144 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

30V N-Channel MOSFET

Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON)

文件：400.96 Kbytes 頁數(shù)：7 Pages

UMW

友臺(tái)半導(dǎo)體

30V N-Channel MOSFET

Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON)

文件：314.95 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 25A@ TC=25℃ ? Drain Source Voltage- : VDSS=25V(Min) ? Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot

文件：309.56 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel SDMOSTM POWER Transistor

General Description The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications. -RoHS

文件：156.5 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS

文件：157.21 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= -12A@ TC=25℃ ? Drain Source Voltage- : VDSS=-40V(Min) ? Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lo

文件：309.66 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電