6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER

6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER

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FUJI

富士通

AMZ & AMY Series Passive 5-Tap DIP/SMD Delay Modules

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RHOMBUS-IND

Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit

INTRODUCTION Power MOSFETs have become the standard choice as the main switching device for low-voltage ( There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental basis of the device structure before the MOSFET behavior can be explained. Th

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VISHAYVishay Siliconix

威世威世科技公司

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is H

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AOSMD

萬國半導(dǎo)體