絲?。?a target="_blank" title="Marking" href="/afe5401ep/marking.html">AFE5401EP；Package：VQFN；AFE5401-EP Quad-Channel, Analog Front-End for Automotive Radar Baseband Receiver

1 Features ? Integrated Analog Front-End Includes: – Quad LNA, Equalizer, PGA, Antialiasing Filter, and ADC ? Input-Referred Noise with 30dB PGA Gain: – 2.9nV/√ Hz for 15dB LNA Gain – 2.0nV/√ Hz for 18dB LNA Gain with HIGH_POW_LNA Mode ? Simultaneous Sampling Across Channels ? Programmabl

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TI

德州儀器

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

文件：153.3 Kbytes 頁(yè)數(shù)：5 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

文件：153.3 Kbytes 頁(yè)數(shù)：5 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=-150V * Collector Dissipation: Pc(max)=625mW * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier

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AVICTEK