(SQUARE STEM WITH CAP OPTIONS) MECHANICAL CONTACT STYLE

FEATURES Positive tactile feedback. Ultraminiature structure suitable for high density mounting. Economic but high reliability. Insert molded terminals prevent flux build-up during soldering.

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APEM

埃斐

Electrostatic Discharge Prevention-Input Protection

文件：56.26 Kbytes 頁數(shù)：3 Pages

FAIRCHILD

仙童半導體

VHF POWER MOSFET

DESCRIPTION: The ASI BLF248is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: ? PG= 11 dB Typical at 225 MHz ? 5:1Load VSWR Capability ? Omnigold? metalization system

文件：22.49 Kbytes 頁數(shù)：1 Pages

ASI

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

文件：105.14 Kbytes 頁數(shù)：13 Pages

PHI

PHI