絲印：8638；Package：VQFN(RGE)；12-Bit, 1MSPS, 4-/8-Channel, Bipolar-Input, SAR Analog-to-Digital Converter with Software-Selectable Ranges

1FEATURES 23? Selectable Input Range: ±10V, ±5V, ±2.5V, 0V to 10V, or 0V to 5V Up to ±12V with External Reference ? No Latent Conversions Up to 1MSPS ? Outstanding Performance: 12 Bits No Missing Codes INL: ±0.9LSB SNR: 71.8dB ? Highly Integrated: 4- or 8-Channel Input Mux Temperature

文件：2.92166 Mbytes 頁(yè)數(shù)：77 Pages

TI

德州儀器

12-Bit, 1MSPS, 4-/8-Channel, Bipolar-Input, SAR Analog-to-Digital Converter with Software-Selectable Ranges

1FEATURES 23? Selectable Input Range: ±10V, ±5V, ±2.5V, 0V to 10V, or 0V to 5V Up to ±12V with External Reference ? No Latent Conversions Up to 1MSPS ? Outstanding Performance: 12 Bits No Missing Codes INL: ±0.9LSB SNR: 71.8dB ? Highly Integrated: 4- or 8-Channel Input Mux Temperature

文件：2.92166 Mbytes 頁(yè)數(shù)：77 Pages

TI

德州儀器

N-Channel PowerTrench? MOSFET 40 V, 18 A, 4.3 m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ■ Max rDS(on) = 4.3 m? at VGS = 10 V, ID =

文件：286.36 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 40 V, 18 A, 4.3 mΩ

Features Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：373.21 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體