| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>AB8;Package:SMB;600 W Transient Voltage Suppressor 1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W ? Reverse standoff 文件:229.55 Kbytes 頁(yè)數(shù):12 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/ab823/marking.html">AB823;Package:SSOP;9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc 文件:385.69 Kbytes 頁(yè)數(shù):16 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab823/marking.html">AB823;Package:SSOP;9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc 文件:385.69 Kbytes 頁(yè)數(shù):16 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab823/marking.html">AB823;Package:SSOP;9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc 文件:385.69 Kbytes 頁(yè)數(shù):16 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab827/marking.html">AB827;Package:SSOP;10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-ΙΙB? BiCMOS Design Significantly Reduces Power Dissipation Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) 文件:519.58 Kbytes 頁(yè)數(shù):19 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab827/marking.html">AB827;Package:SSOP(DB);10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-ΙΙB? BiCMOS Design Significantly Reduces Power Dissipation Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) 文件:519.94 Kbytes 頁(yè)數(shù):19 Pages | TI 德州儀器 | TI | ||
絲印:AB827;Package:SSOP(DB);10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-ΙΙB? BiCMOS Design Significantly Reduces Power Dissipation Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) 文件:519.94 Kbytes 頁(yè)數(shù):19 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab827/marking.html">AB827;Package:SSOP;10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-ΙΙB? BiCMOS Design Significantly Reduces Power Dissipation Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) 文件:519.58 Kbytes 頁(yè)數(shù):19 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab827/marking.html">AB827;Package:TSSOP;10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-ΙΙB? BiCMOS Design Significantly Reduces Power Dissipation Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) 文件:519.58 Kbytes 頁(yè)數(shù):19 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ab827/marking.html">AB827;Package:TSSOP(PW);10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-ΙΙB? BiCMOS Design Significantly Reduces Power Dissipation Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) 文件:519.94 Kbytes 頁(yè)數(shù):19 Pages | TI 德州儀器 | TI |
詳細(xì)參數(shù)
- 型號(hào):
AB8
- 功能描述:
TVS 二極管 - 瞬態(tài)電壓抑制器 16volts 5uA 23.1 Amps Uni-Dir
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 極性:
Bidirectional
- 擊穿電壓:
58.9 V
- 鉗位電壓:
77.4 V
- 峰值浪涌電流:
38.8 A
- 封裝/箱體:
DO-214AB
- 最小工作溫度:
- 55 C
- 最大工作溫度:
+ 150 C
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
DO-214AA |
29362 |
VISHAY/威世全新特價(jià)SMBJ16A即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢(xún)價(jià) | ||
LITTELFUSE |
23+ |
NA |
28520 |
原裝進(jìn)口ICMCUSOCMOS等知名國(guó)內(nèi)外品牌只做原裝全 |
詢(xún)價(jià) | ||
25+ |
100 |
公司現(xiàn)貨庫(kù)存 |
詢(xún)價(jià) | ||||
SUNMATE(森美特) |
2019+ROHS |
DO-214AA(SMB) |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢(xún)價(jià) | ||
CCD |
23+ |
SMB |
56000 |
詢(xún)價(jià) | |||
BRIGHTKIN |
23+ |
SMB |
6996 |
只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
LITTELFUSE/力特 |
2021+ |
SMB |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢(xún)價(jià) |
詢(xún)價(jià) | ||
LITTELFU |
08+ |
DO-214AA |
90000 |
絕對(duì)全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢(xún)價(jià) | ||
ECOMAL |
24+ |
原廠封裝 |
2650 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
24+ |
3000 |
自己現(xiàn)貨 |
詢(xún)價(jià) |
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