| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON) 文件：1.94327 Mbytes 頁數(shù)：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology IRLML6402 General Features VDS = -20V ID =-2.3A RDS(ON) 文件：1.89655 Mbytes 頁數(shù)：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：A1SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS Features TrenchFET Power MOSFET 文件：1.46628 Mbytes 頁數(shù)：5 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The PMV48XPA uses advanced trench technology General Features VDS = -20V ID =-2.3A RDS(ON) 文件：1.94325 Mbytes 頁數(shù)：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter 文件：883.22 Kbytes 頁數(shù)：3 Pages | UMW 友臺半導體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter 文件：575.18 Kbytes 頁數(shù)：3 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description The SQ2301ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-2.3A RDS(ON) 文件：1.89649 Mbytes 頁數(shù)：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；P-Channel MOSFET FEATURES TrenchFET Power MOSFET 文件：462.77 Kbytes 頁數(shù)：2 Pages | YFWDIODE 佑風微 | YFWDIODE | ||
絲印：A1SHB；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor 文件：840.4 Kbytes 頁數(shù)：5 Pages | ADV 愛德微 | ADV | ||
絲?。?a target="_blank" title="Marking" href="/a1shb/marking.html">A1SHB；Package：SOT-23；P-Channel MOSFET uses advanced trench technology 文件：1.52056 Mbytes 頁數(shù)：4 Pages | DOINGTER 杜因特 | DOINGTER |
技術(shù)參數(shù)
- 額定電壓(AC)：
28V
- 額定電壓(DC)：
28V
- 鈕柄形狀：
扁桿鈕柄
- 安裝方式：
直插
- 工作溫度：
-30℃~+85℃
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NKK |
25+ |
開關(guān)元件 |
2896 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VISHAY |
23+ |
SOT23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VISHAY |
2016+ |
SOT23 |
33000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
迪普 |
19+ |
SOT23 |
5280 |
原裝 |
詢價 | ||
VISHAY |
原廠封裝 |
9800 |
原裝進口公司現(xiàn)貨假一賠百 |
詢價 | |||
MITSUBISHI/三菱 |
22+ |
SMD |
30000 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 | ||
LUMILEDS |
兩年內(nèi) |
N/A |
1387200 |
原裝現(xiàn)貨,實單價格可談 |
詢價 | ||
富士 |
24+ |
SMD |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
恩XP |
25+ |
SOT323 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
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