絲?。?strong>A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94327 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology IRLML6402 General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89655 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>A1SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features TrenchFET Power MOSFET

文件：1.46628 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The PMV48XPA uses advanced trench technology General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94325 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>A1SHB；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：883.22 Kbytes 頁數(shù)：3 Pages

UMW

友臺半導(dǎo)體

絲印：A1SHB；Package：SOT-23；MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：575.18 Kbytes 頁數(shù)：3 Pages

EVVOSEMI

翊歐

絲?。?strong>A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The SQ2301ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89649 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲印：A1SHB；Package：SOT-23；P-Channel MOSFET

FEATURES TrenchFET Power MOSFET

文件：462.77 Kbytes 頁數(shù)：2 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>A1SHB；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

文件：840.4 Kbytes 頁數(shù)：5 Pages

ADV

愛德微

絲印：A1SHB；Package：SOT-23；P-Channel MOSFET uses advanced trench technology

文件：1.52056 Mbytes 頁數(shù)：4 Pages

DOINGTER

杜因特