絲?。?strong>A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

文件：3.79248 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>A19T；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

General Features ? Vos =-30Vlo = 424 Rosin

文件：2.60787 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

文件：165.34 Kbytes 頁數(shù)：8 Pages

RECTRON

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絲?。?strong>A19T；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter

文件：770.25 Kbytes 頁數(shù)：2 Pages

UMW

友臺半導體

絲印：A19T；Package：SOT-23；GENERAL FEATURES

文件：374.38 Kbytes 頁數(shù)：4 Pages

FS

絲印：a19t；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

文件：805.27 Kbytes 頁數(shù)：8 Pages

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麗正國際

絲?。?strong>A19T；Package：SOT-23；Plastic-Encapsulate MOSFETS

文件：458.14 Kbytes 頁數(shù)：3 Pages

SHENZHENSLS

三聯(lián)盛

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter

文件：770.25 Kbytes 頁數(shù)：2 Pages

UMW

友臺半導體

P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

文件：165.34 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

P-Channel Enhancement Mode Power MOSFET

文件：805.27 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際