isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

文件：63.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TO-220 MOS FETs 場(chǎng)效應(yīng)管

GSME

桂微

N-Channel 650V (D-S) Power MOSFET

文件：1.1057 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/9n60m6/marking.html">9N60M6；Package：DPAK；N?channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? LLC converters, resonant converters ? Boost PFC converters Description The new MDmesh M6 t

文件：328.48 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：9N60M2；Package：TO-220FP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：884.75 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/9n60m2/marking.html">9N60M2；Package：I2PAKFP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：884.75 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：9N60M2；Package：PowerFLAT5x6HV；N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.04937 Mbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體