N-Channel 650V (D-S) Power MOSFET

文件：1.1057 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?strong>9N60M2；Package：TO-220FP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：884.75 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>9N60M2；Package：I2PAKFP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：884.75 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>9N60M2；Package：PowerFLAT5x6HV；N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.04937 Mbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體