9.0A, 1500V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

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N-channel 1500 V - 1.8 ? - 8 A - TO-247 very high voltage PowerMESH? Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY? process, STMi

文件：258.99 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>9N150；Package：TO-247；N-channel 1500 V - 1.8 ? - 8 A - TO-247 very high voltage PowerMESH? Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY? process, STMi

文件：258.99 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

9.0A, 1500V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：665.68 Kbytes 頁數(shù)：7 Pages

UTC

友順