RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene? insulation, overall Beldfoil? (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

文件：199.98 Kbytes 頁數(shù)：2 Pages

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包裝：散裝 類別：工具 配件 描述：9933 STRUCTURED TOOTH TUNGSTEN C

DREMEL

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene? insulation, overall Beldfoil? (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

文件：199.98 Kbytes 頁數(shù)：2 Pages

BELDEN

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RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene? insulation, overall Beldfoil? (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

文件：199.98 Kbytes 頁數(shù)：2 Pages

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RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene? insulation, overall Beldfoil? (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

文件：199.98 Kbytes 頁數(shù)：2 Pages

BELDEN

百通

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene? insulation, overall Beldfoil? (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

文件：199.98 Kbytes 頁數(shù)：2 Pages

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Cumulative Trauma Disorders can result from the prolonged use of manually powered hand tools.

文件：323.82 Kbytes 頁數(shù)：6 Pages

TEC

泰科電子

miniSMD Selection Guide and Product Data

文件：396.67 Kbytes 頁數(shù)：12 Pages

MACOM

Dual P-Channel PowerTrench? MOSFET

General Description\nThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V\nRDS(ON) = 105 mW @ VGS = –3.0 V\nRDS(ON) = 115 mW @ VGS = –2.7 V\n· Extended VGSS range (±12V) for battery applications\n· Low gate charge\n· High performance trench technology for extremely\nlow RDS(ON)\n· High power and current handling capabilityAppl;

ONSEMI

安森美半導(dǎo)體

線纜線束

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