Dual P-Channel PowerTrench? MOSFET

General Description\nThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V\nRDS(ON) = 105 mW @ VGS = –3.0 V\nRDS(ON) = 115 mW @ VGS = –2.7 V\n· Extended VGSS range (±12V) for battery applications\n· Low gate charge\n· High performance trench technology for extremely\nlow RDS(ON)\n· High power and current handling capabilityAppl;

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安森美半導(dǎo)體

Dual P-Channel Enhancement Mode MOSFET

Features ? -20V/-3.5A , RDS(ON)=45m?(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52m?(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60m?(typ.) @ VGS=-2.7V ? Super High Dense Cell Design for Extremely Low RDS(ON) ? Reliable and Rugged ? SOP-8 Package Applications ? Power Management in Noteb

文件：124.2 Kbytes 頁數(shù)：9 Pages

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茂達(dá)電子

Dual P-Channel Enhancement Mode MOSFET

Features ? -20V/-3.5A , RDS(ON)=45m?(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52m?(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60m?(typ.) @ VGS=-2.7V ? Super High Dense Cell Design for Extremely Low RDS(ON) ? Reliable and Rugged ? SOP-8 Package Applications ? Power Management in Noteb

文件：124.2 Kbytes 頁數(shù)：9 Pages

ANPEC

茂達(dá)電子

Dual P-Channel Enhancement Mode MOSFET

Features ? -20V/-3.5A , RDS(ON)=45m?(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52m?(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60m?(typ.) @ VGS=-2.7V ? Super High Dense Cell Design for Extremely Low RDS(ON) ? Reliable and Rugged ? SOP-8 Package Applications ? Power Management in Noteb

文件：124.2 Kbytes 頁數(shù)：9 Pages

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茂達(dá)電子