絲?。?strong>8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

文件：3.05317 Mbytes 頁(yè)數(shù)：6 Pages

TECHPUBLIC

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絲印：8205A；Package：SOT23-6；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

文件：1.34742 Mbytes 頁(yè)數(shù)：6 Pages

UMW

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絲?。?strong>8205A；Package：SOT-23-6；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

文件：1.72304 Mbytes 頁(yè)數(shù)：6 Pages

TUOFENG

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絲?。?strong>8205A；Package：SOT23-6；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

文件：2.45824 Mbytes 頁(yè)數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

絲印：8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆Vgs+12V

文件：3.0646 Mbytes 頁(yè)數(shù)：6 Pages

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絲?。?strong>8205A；Package：TSSOP-8；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：3.60546 Mbytes 頁(yè)數(shù)：6 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

文件：3.05317 Mbytes 頁(yè)數(shù)：6 Pages

TECHPUBLIC

臺(tái)舟電子

絲印：8205A；Package：SOT23-6；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

文件：1.34742 Mbytes 頁(yè)數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

文件：532.97 Kbytes 頁(yè)數(shù)：7 Pages

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Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

文件：3.55627 Mbytes 頁(yè)數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體