15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the ? 15A, 55V\n? Simulation Models\n?? - Temperature Compensated PSPICE? and SABER? Models\n?? - SPICE and SABER Thermal Impedance Models\n????? Available on the WEB at: www.fairchildsemi.com\n? Peak Current vs Pulse Width Curve\n? UIS Rating Curve\n? Related Literature\n?? - TB334, “Guidelines for Sol;

ONSEMI

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N-Channel 60 V (D-S) MOSFET

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