SYSTEM 4 Hex Inch Bits High alloy CVM steel, hardened, on 4 mm hex stock.

文件：68.79 Kbytes 頁(yè)數(shù)：1 Pages

WIHA

威漢

N-Channel 60 V (D-S) MOSFET

文件：980.27 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

包裝：散裝 類別：標(biāo)簽，標(biāo)志，護(hù)欄，標(biāo)識(shí) 標(biāo)志，銘牌，招貼 描述：B959 SIGN 18 X 12 NO PARKING FIR

Brady Corporation

包裝：散裝 類別：標(biāo)簽，標(biāo)志，護(hù)欄，標(biāo)識(shí) 標(biāo)志，銘牌，招貼 描述：B959 SIGN 18 X 12 NO PARKING FIR

Brady Corporation

包裝：散裝 類別：工具 螺絲和螺母起子 - 刀頭、刀片和手柄 描述：BIT HEX 0.7MM 1.1\

WIHA

威漢

Fieldbus, 1 Pr #18 Str TC, PP ins, OS, PVC Jkt, CST Armor, LSZH Jkt, PLTC ISA/SP-50 Type A, PLTC

Product Description Fieldbus, 1 Pair 18AWG (7x26) Tinned Copper, PP insulation, Overall Beldfoil? Shield, PVC Inner Jacket, Steel Corrugated Tape Armor, LSZH Outer Jacket, PLTC ISA/SP-50 Type A, PLTC

文件：141.57 Kbytes 頁(yè)數(shù)：2 Pages

BELDEN

百通

N-Channel 60 V (D-S) MOSFET

文件：1.00198 Mbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the ? 15A, 55V\n? Simulation Models\n?? - Temperature Compensated PSPICE? and SABER? Models\n?? - SPICE and SABER Thermal Impedance Models\n????? Available on the WEB at: www.fairchildsemi.com\n? Peak Current vs Pulse Width Curve\n? UIS Rating Curve\n? Related Literature\n?? - TB334, “Guidelines for Sol;

ONSEMI

安森美半導(dǎo)體