絲?。?strong>72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features ? 60V/0.2A, RDS (ON) =2500m?(Typ.)@VGS=10V RDS (ON) =2500m?(Typ.)@VGS=5V ? ESD protected up to 2KV ? Low On-Resistance ? Super High Dense Cell Design ? Reliable and Rugged ? Lead Free and Green Devices Available (RoHS Compliant) Applications ? Power Management in Desktop C

文件：411.62 Kbytes 頁數(shù)：8 Pages

RUICHIPS

銳駿半導體

絲?。?strong>72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.30336 Mbytes 頁數(shù)：5 Pages

TGS

絲?。?strong>72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.19 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚杰電子

絲?。?strong>72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capability. ? ESD protected ? Load Switch for Portable Devices. ? DC/DC Converter.

文件：1.406 Mbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

文件：307.7 Kbytes 頁數(shù)：1 Pages

SHENZHENSLS

三聯(lián)盛

絲?。?strong>72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.44 Kbytes 頁數(shù)：5 Pages

RECTRON

麗正國際

絲印：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.77 Kbytes 頁數(shù)：5 Pages

RECTRON

麗正國際

絲?。?strong>72K；Package：SOT-323；N-Channel Mosfet

FEATURES Rds(on) ≤ 3? @Vgs=10V Rds(on) ≤ 4? @Vgs=4.5V

文件：191.87 Kbytes 頁數(shù)：5 Pages

RECTRON

麗正國際

絲?。?strong>72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features ?Low on resistance RDS(ON)?Low gate threshold voltage?Low input capacitance?ESD protected up to 2KV?-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

文件：419.51 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>72K；Package：SOT-363；Plastic-Encapsulate MOSFET

Features ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? ESD protected ? Load Switch for Portable Devices. ? DC/DC Converter.

文件：1.42099 Mbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子