Dual N-Channel 2.5-V (G-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best

文件：182.97 Kbytes 頁數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

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CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

CMOS PARALLEL FIFO WITH FLAGS 64 x 5

FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth

文件：384.76 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩