| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
72413 | Dual N-Channel 2.5-V (G-S) MOSFET DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best 文件:182.97 Kbytes 頁數(shù):3 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS PARALLEL FIFO WITH FLAGS 64 x 5 FEATURES: ? First-ln/First-Out Dual-Port memory—45MHz ? 64 x 5 organization ? Low-power consumption — Active: 200mW (typical) ? RAM-based internal structure allows for fast fall-through time ? Asynchronous and simultaneous read and write ? Expandable by bit width ? Cascadable by word depth 文件:384.76 Kbytes 頁數(shù):11 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- 功能:
異步
- 數(shù)據(jù)速率:
25MHz
- 訪問時間:
25ns
- 電壓 - 電源:
4.5V ~ 5.5V
- 電流 - 電源(最大值):
60mA
- 總線方向:
單向
- 擴充類型:
深度,寬度
- 可編程標(biāo)志支持:
無
- 中繼能力:
無
- FWFT 支持:
無
- 工作溫度:
0°C ~ 70°C
- 安裝類型:
表面貼裝
- 封裝/外殼:
20-SOIC(0.295\,7.50mm 寬)
- 供應(yīng)商器件封裝:
20-SOIC
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
25+ |
DIP |
2700 |
全新原裝自家現(xiàn)貨優(yōu)勢! |
詢價 | |||
IDT, Integrated Device Technol |
24+ |
20-SOIC |
53200 |
一級代理/放心采購 |
詢價 | ||
IDT |
25+ |
SOP-20 |
1001 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Integrated Device Technology |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Renesas |
25+ |
電聯(lián)咨詢 |
7800 |
公司現(xiàn)貨,提供拆樣技術(shù)支持 |
詢價 | ||
Amphenol Industrial Operations |
25+ |
11 |
原廠現(xiàn)貨渠道 |
詢價 | |||
A |
23+ |
DIP |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
24+ |
BGA |
7 |
詢價 | ||||
BROADCOM |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
BROADCOM |
18+ |
BGA |
47653 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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- SI7970DP
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- SI7946DP
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- SI7921DN
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- SI7948DP
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- SE1
- PI7C8150B
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- WNS40H100C
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- TD62308
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- GRM21BR71H104JA11#
- TL074

