絲?。?strong>702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

文件：80.02 Kbytes 頁數(shù)：2 Pages

CENTRAL

絲?。?strong>702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features ? Voltage Controlled Small Signal Switch ? High Density Cell Design for Low RDS(ON) ? Rugged and Reliable ? High Saturation Current Capablity ? RoHS Compliance

文件：245.32 Kbytes 頁數(shù)：7 Pages

TAITRON

絲?。?strong>702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Halogen-free

文件：483.53 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?strong>702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re

文件：172.69 Kbytes 頁數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲?。?strong>702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：283.89 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?strong>702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：461.13 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲印：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 ? ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>702；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：933.66 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>702；Package：SOT-23；Small Signal MOSFET 115 mAmps, 60 Volts

Small Signal MOSFET 115 mAmps, 60 Volts N-CHANNEL SOT-23 N–Channel SOT–23 ? Pb?Free Package is Available.

文件：70.67 Kbytes 頁數(shù)：3 Pages

LRC

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