絲?。?strong>702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：74.34 Kbytes 頁(yè)數(shù)：1 Pages

KEXIN

科信電子

絲印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁(yè)數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 頁(yè)數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 ? ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 頁(yè)數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>702；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

文件：25.02 Kbytes 頁(yè)數(shù)：1 Pages

ZETEX

絲?。?strong>702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

文件：80.02 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

絲?。?strong>702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features ? Voltage Controlled Small Signal Switch ? High Density Cell Design for Low RDS(ON) ? Rugged and Reliable ? High Saturation Current Capablity ? RoHS Compliance

文件：245.32 Kbytes 頁(yè)數(shù)：7 Pages

TAITRON

絲印：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Halogen-free

文件：483.53 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?strong>702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re

文件：172.69 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂