N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

Features ? Extremely low gate charge ? Excellent output capacitance (Coss) profile ? 100% avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the de

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STMICROELECTRONICS

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Extremely low gate charge

文件：1.08637 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Extremely low gate charge

文件：1.08637 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

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STMICROELECTRONICS

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