N溝道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

ST

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Extremely low gate charge

文件：1.08637 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

文件：1.13144 Mbytes 頁數(shù)：11 Pages

VBSEMI

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Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

文件：1.11572 Mbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.45 Kbytes 頁數(shù)：2 Pages

ISC

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