| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：757.4 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲?。?strong>65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.66 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.66 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.65 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲?。?strong>65R075DFD；Package：TO-220；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.66 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲?。?strong>65R075DFD；Package：TO-220；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.66 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲?。?strong>65R075DFD；Package：TO-220；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：757.4 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲?。?strong>65R075DFD；Package：TO-220；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.65 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲印：65R075DFD；Package：TO-247；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.65 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC | ||
絲印：65R075DFD；Package：TO-247；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：757.4 Kbytes 頁數(shù)：10 Pages | WUMC 紫光國微 | WUMC |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
無錫紫光微 |
2447 |
TO-220 |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
紫光微 |
24+ |
TO-252 |
20000 |
原裝正品保證原裝 |
詢價 | ||
UNIGROUP/紫光微 |
2540+ |
8595 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | |||
Oplink |
24+ |
NA |
5000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
Oplink |
2010+ |
N/A |
23 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
OPLINK |
25+ |
光電元件 |
18 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
紫光微 |
24+ |
TO-220 |
45000 |
原裝正品現(xiàn)貨 低價出售 假一賠十 |
詢價 | ||
無錫紫光微 |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
TOSHBIA |
2020+ |
QFN |
5000 |
上傳都是百分之百進口原裝現(xiàn)貨 |
詢價 |
相關芯片絲印
更多- TPV65R080C
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相關庫存
更多- TPW65R080C
- IPT65R080CFD7
- IMW65R083M1H
- IMBG65R083M1H
- TPV65R085CFD
- TPW65R085CFD
- IPB65R090CFD7
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- IMW65R107M1H
- IMBG65R107M1H
- IGLT65R110D2
- IPB65R110CFD7
- IPP65R110CFD7
- IPL65R115CFD7
- IPW65R125CFD7
- IPDQ65R125CFD7
- IGLR65R140D2
- IGLD65R140D2
- IPP65R155CFD7
- IPT65R155CFD7
- TPV65R160C
- IPL65R160CFD7
- IMT65R163M1H
- TPG65R175MH
- TPA65R180CFD
- IPT65R190CFD7
- TPB65R1K2C
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