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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IMBG65R050M2H

          絲?。?strong>65R050M2;Package:PG-TO263-7;MOSFET CoolSiCa MOSFET 650 V G2

          Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.65401 Mbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          IMLT65R050M2H

          絲?。?strong>65R050M2;Package:PG-HDSOP-16;SiC MOSFET CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.1951 Mbytes 頁(yè)數(shù):19 Pages

          INFINEON

          英飛凌

          IMT65R050M2H

          絲印:65R050M2;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.35784 Mbytes 頁(yè)數(shù):18 Pages

          INFINEON

          英飛凌

          IMTA65R050M2H

          絲?。?strong>65R050M2;Package:PG-LHSOF-4;SiC MOSFET CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:934.4 Kbytes 頁(yè)數(shù):17 Pages

          INFINEON

          英飛凌

          IMW65R050M2H

          絲印:65R050M2;Package:PG-TO247-3;MOSFET CoolSiCa MOSFET 650 V G2

          Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.50315 Mbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          IMZA65R050M2H

          絲印:65R050M2;Package:PG-TO247-4;MOSFET CoolSiCa MOSFET 650 V G2

          Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.51731 Mbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

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          更多65R050M2供應(yīng)商 更新時(shí)間2026-1-20 18:45:00
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