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    首頁 >65C6600>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    65C6600

    650V CoolMOS C6 Power Transistor

    Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

    文件:2.09837 Mbytes 頁數(shù):19 Pages

    INFINEON

    英飛凌

    IP165R600C6

    絲?。?strong>65C6600;Package:PG-TO262;650V CoolMOS C6 Power Transistor

    Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

    文件:2.09837 Mbytes 頁數(shù):19 Pages

    INFINEON

    英飛凌

    IPA65R600C6

    絲?。?strong>65C6600;Package:PG-TO220FullPAK;650V CoolMOS C6 Power Transistor

    Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

    文件:2.09837 Mbytes 頁數(shù):19 Pages

    INFINEON

    英飛凌

    IPB65R600C6

    絲印:65C6600;Package:PG-TO263;650V CoolMOS C6 Power Transistor

    Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

    文件:2.09837 Mbytes 頁數(shù):19 Pages

    INFINEON

    英飛凌

    IPD65R600C6

    絲?。?strong>65C6600;Package:PG-TO252;650V CoolMOS C6 Power Transistor

    Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

    文件:2.09837 Mbytes 頁數(shù):19 Pages

    INFINEON

    英飛凌

    IPP65R600C6

    絲?。?strong>65C6600;Package:PG-TO220;650V CoolMOS C6 Power Transistor

    Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

    文件:2.09837 Mbytes 頁數(shù):19 Pages

    INFINEON

    英飛凌

    供應(yīng)商型號品牌批號封裝庫存備注價格
    INFINEON/英飛凌
    23+
    TO262
    5000
    原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
    詢價
    INFINEON
    23+
    TO263
    8000
    只做原裝現(xiàn)貨
    詢價
    INFINEON
    23+
    TO263
    7000
    詢價
    INFINEON/英飛凌
    23+
    TO251-3
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價
    INFINEON
    1240+
    TO251-3
    60
    一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
    詢價
    INFINEON/英飛凌
    22+
    TO252
    12000
    只做原裝、原廠優(yōu)勢渠道、假一賠十
    詢價
    INFINEON/英飛凌
    24+
    TO252
    990000
    明嘉萊只做原裝正品現(xiàn)貨
    詢價
    INFINEON
    24+
    TO251-3
    8500
    原廠原包原裝公司現(xiàn)貨,假一賠十,低價出售
    詢價
    INFINEON/英飛凌
    2026+
    TO252
    54648
    百分百原裝現(xiàn)貨 實單必成 歡迎詢價
    詢價
    INFINEON/英飛凌
    25+
    TO-251A
    5999
    全新原裝正品支持含稅
    詢價
    更多65C6600供應(yīng)商 更新時間2026-1-22 11:09:00

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