| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
60N06 | 絲?。?strong>60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：658.29 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | |
60N06 | 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty 文件：201.28 Kbytes 頁數(shù)：8 Pages | UTC 友順 | UTC | |
60N06 | 60A, 60V N-CHANNEL POWER MOSFET 文件：316.43 Kbytes 頁數(shù)：8 Pages | UTC 友順 | UTC | |
60N06 | isc N-Channel MOSFET Transistor 文件：284.8 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
60N06 | 絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；N-Channel 60-V (D-S) MOSFET 文件：983.43 Kbytes 頁數(shù)：8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | |
絲?。?strong>60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The 60N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：922.46 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
60N06 | 60 Amps, 60 Volts??N-CHANNEL POWER MOSFET The UTC 60N06?is n-channel enhancement mode power field effect transistors with stable?off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. ? RDS(ON) = 18m??@VGS = 10 V \n? Ultra low gate charge ( typical 39 nC )?? \n? Fast switching capability \n? Low reverse transfer Capacitance (CRSS= typical 115 pF ) \n? Avalanche energy Specified \n? Improved dv/dt capability, high ruggedness; | UTC 友順 | UTC | |
N-Channel 60-V (D-S) MOSFET FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET ? Material categorization: 文件：949.64 Kbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty 文件：201.28 Kbytes 頁數(shù)：8 Pages | UTC 友順 | UTC | ||
60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty 文件：201.28 Kbytes 頁數(shù)：8 Pages | UTC 友順 | UTC |
技術(shù)參數(shù)
- VGS(±V)：
±20
- ID(A)：
60
- RDS(ON)MAX.(mΩ)atVGS=10V：
18
- CISSTYP.(pF)：
2000
- COSSTYP.(pF)：
400
- CRSSTYP.(pF)：
115
- QgTYP.(nC)：
30
- QgsTYP.(nC)：
12
- QgdTYP.(nC)：
10
- VGS(th)(V)MIN.：
2
- VGS(th)(V)MAX.：
4
- TrrTYP.(nS)：
60
- QrrTYP.(nC)：
3.4
- Package：
TO-220_TO-220F_TO-263_TO-220F1
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
GOFORD/谷峰 |
22+23+ |
TO-252TR |
85192 |
新到貨全新原裝誠信經(jīng)營 |
詢價 | ||
多品牌 |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
12+ |
TO-263 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | |||
AOS |
25+ |
TO-252 |
12000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ST或仙童 |
24+ |
TO-220 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
SEC |
18+ |
TO-263 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
FSC |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
GOFORD(谷峰) |
2447 |
TO-252-2(DPAK) |
105000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
ON |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
UTC/友順 |
2022+ |
TO-252 |
7500 |
原廠代理 終端免費提供樣品 |
詢價 |
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