絲?。?a target="_blank" title="Marking" href="/60n06/marking.html">60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 60N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.46 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

N-Channel 60-V (D-S) MOSFET

FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET ? Material categorization:

文件：949.64 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

N-Channel Enhancement Mode Field Effect Transistor

文件：426.07 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 60A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：647.86 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞