絲?。?strong>60；Package：SOT-143；Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)

Silicon PIN Diodes ● RF switch ● RF attenuator for frequencies above 10 MHz

文件：77.85 Kbytes 頁(yè)數(shù)：4 Pages

SIEMENS

西門(mén)子

絲?。?strong>60；Package：SOD-323；SMALL SIGNAL SCHOTTKY DIODE

FEATURES n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n LOW FORWARD VOLTAGE DROP n EXTREMELY FAST SWITCHING n SURFACE MOUNTED DEVICE

文件：237.21 Kbytes 頁(yè)數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>60；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>60；Package：WDFN-8SL；3A, 1.2MHz, 6V Synchronous Step-Down Converter In WDFN-8L 2x2

General Description The RT5753A/B/C/D is a simple, easy-to-use, 3A synchronous step-down DC-DC converter with an input supply voltage range from 2.5V to 6V. The device builds in an accurate 0.6V reference voltage and integrates low RDS(ON) power MOSFETs to achieve high efficiency in WDFN-8L

文件：972.79 Kbytes 頁(yè)數(shù)：28 Pages

RICHTEK

立锜科技

絲?。?strong>60；Package：SOT-416FL；NPN 100mA 50V Digital Transistor

文件：1.39468 Mbytes 頁(yè)數(shù)：10 Pages

ROHM

羅姆

絲印：60；Package：SOT-723；NPN 100mA 50V Digital Transistor

文件：1.39468 Mbytes 頁(yè)數(shù)：10 Pages

ROHM

羅姆

絲?。?strong>60；Package：SOT-323FL；NPN 100mA 50V Digital Transistor

文件：1.39468 Mbytes 頁(yè)數(shù)：10 Pages

ROHM

羅姆

絲?。?strong>60；Package：TUMD2M；Schottky Barrier Diode

文件：685.85 Kbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/600/marking.html">600；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■For surface mounted applications in order to optimize board space ■Low profile package ■Built in strain relief ■Glass p assivated j unction ■Low inductance ■Excellent clamping capability ■150 0W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0

文件：1.4662 Mbytes 頁(yè)數(shù)：7 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/6003/marking.html">6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 頁(yè)數(shù)：5 Pages

LEIDITECH

雷卯電子