絲?。?strong>6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：639.44 Kbytes 頁數(shù)：7 Pages

NCEPOWER

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絲?。?strong>6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：642.2 Kbytes 頁數(shù)：7 Pages

NCEPOWER

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絲?。?a target="_blank" title="Marking" href="/6003xm/marking.html">6003XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：675.83 Kbytes 頁數(shù)：7 Pages

NCEPOWER

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絲印：6003XY；Package：SOT-23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：711.16 Kbytes 頁數(shù)：7 Pages

NCEPOWER

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