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    首頁
                >絲印反查>5C6
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    GLZ5.6C
    絲?。?strong>5C6；Package：MELF；500mW SURFACE MOUNT ZENER DIODE
    
Planar Die Construction
500mW Power Dissipation
2.0 – 56V Nominal Zener Voltage
Ideally Suited for Automated Assembly
For Use in Voltage Stabilizer or Reference
    文件：65.93 Kbytes 頁數(shù)：6 Pages
    WTE
    Won-Top Electronics
    

    NTMFS5C612NT1G
    絲?。?a target="_blank" title="Marking" href="/5c612n/marking.html">5C612N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? These Devices are Pb?Free and are RoHS Compliant
    文件：178.87 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD5C650NLT1G
    絲?。?a target="_blank" title="Marking" href="/5c650l/marking.html">5C650L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C650NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
    文件：233.21 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD5C668NLT1G
    絲?。?a target="_blank" title="Marking" href="/5c668l/marking.html">5C668L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C668NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
    文件：230.69 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD5C672NLT1G
    絲印：5C672L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C672NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
    文件：231.22 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD5C674NLT1G
    絲?。?a target="_blank" title="Marking" href="/5c674l/marking.html">5C674L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 14.4 m, 42 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C674NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
    文件：372.44 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD5C680NLT1G
    絲?。?a target="_blank" title="Marking" href="/5c680l/marking.html">5C680L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C680NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
    文件：364.89 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFS5C604NT1G
    絲?。?a target="_blank" title="Marking" href="/5c604n/marking.html">5C604N；Package：DFN5；MOSFET - Power, Single N-Channel 60 V, 1.2 m, 288 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFS5C604NWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and
    文件：189.49 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFS5C645NT1G
    絲印：5C645N；Package：DFN5；MOSFET - Power, Single N-Channel, DFN5/DFNW5 60 V, 4.6 m, 92 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFS5C645NWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and
    文件：237.87 Kbytes 頁數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFS5C670NT1G
    絲?。?a target="_blank" title="Marking" href="/5c670n/marking.html">5C670N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFS5C670NWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and
    文件：179.45 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號：
      5C6
    • 制造商：
      EIC 
    • 制造商全稱：
      EIC discrete Semiconductors 
    • 功能描述：
      ZENER DIODES 
    
            
    
        
    
            
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