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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          GLZ5.6C
          絲?。?strong>5C6；Package：MELF；500mW SURFACE MOUNT ZENER DIODE
          
Planar Die Construction
500mW Power Dissipation
2.0 – 56V Nominal Zener Voltage
Ideally Suited for Automated Assembly
For Use in Voltage Stabilizer or Reference
          文件：65.93 Kbytes 頁(yè)數(shù)：6 Pages
          WTE
          Won-Top Electronics
          

          NTMFS5C612NT1G
          絲印：5C612N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? These Devices are Pb?Free and are RoHS Compliant
          文件：178.87 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD5C650NLT1G
          絲印：5C650L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C650NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
          文件：233.21 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD5C668NLT1G
          絲印：5C668L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C668NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
          文件：230.69 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD5C672NLT1G
          絲印：5C672L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C672NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
          文件：231.22 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD5C674NLT1G
          絲?。?a target="_blank" title="Marking" href="/5c674l/marking.html">5C674L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 14.4 m, 42 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C674NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
          文件：372.44 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD5C680NLT1G
          絲?。?a target="_blank" title="Marking" href="/5c680l/marking.html">5C680L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C680NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free an
          文件：364.89 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFS5C604NT1G
          絲?。?a target="_blank" title="Marking" href="/5c604n/marking.html">5C604N；Package：DFN5；MOSFET - Power, Single N-Channel 60 V, 1.2 m, 288 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFS5C604NWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and
          文件：189.49 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFS5C645NT1G
          絲印：5C645N；Package：DFN5；MOSFET - Power, Single N-Channel, DFN5/DFNW5 60 V, 4.6 m, 92 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFS5C645NWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and
          文件：237.87 Kbytes 頁(yè)數(shù)：8 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFS5C670NT1G
          絲印：5C670N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFS5C670NWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and
          文件：179.45 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            5C6
          • 制造商：
            EIC 
          • 制造商全稱(chēng)：
            EIC discrete Semiconductors 
          • 功能描述：
            ZENER DIODES 
          
            
          
        
          
            
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