絲?。?strong>4N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.9839 Mbytes 頁數(shù)：11 Pages

RECTRON

麗正國際

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 ? ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 ? ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 ? ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：890.05 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel Enhancement Mode MOSFET

FEATURES ? Fast switching ? 100 avalanche tested ? Improved dv/dt capability APPLICATIONS ? Switch Mode Power Supply (SMPS) ? Uninterruptible Power Supply (UPS) ? Power Factor Correction (PFC)

文件：2.5004 Mbytes 頁數(shù)：9 Pages

EVVOSEMI

翊歐

600V N-Channel Enhancement Mode MOSFET

FEATURES ? Fast switching ? 100% avalanche tested ? Improved dv/dt capability APPLICATIONS ? Switch Mode Power Supply (SMPS) ? Uninterruptible Power Supply (UPS) ? Power Factor Correction (PFC)

文件：2.5004 Mbytes 頁數(shù)：9 Pages

EVVOSEMI

翊歐

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

文件：1.81615 Mbytes 頁數(shù)：9 Pages

UMW

友臺半導(dǎo)體

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

文件：152.4 Kbytes 頁數(shù)：8 Pages

UTC

友順

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

文件：152.4 Kbytes 頁數(shù)：8 Pages

UTC

友順