4A, 600V N-CHANNEL POWER MOSFET

文件：408.85 Kbytes 頁數(shù)：9 Pages

UTC

友順

4A, 600V N-CHANNEL POWER MOSFET

文件：376.13 Kbytes 頁數(shù)：8 Pages

UTC

友順

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：432.12 Kbytes 頁數(shù)：9 Pages

UTC

友順

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes 頁數(shù)：9 Pages

SUNMATE

森美特

4A mps,600 Volts N-CHANNEL MOSFET

文件：200.75 Kbytes 頁數(shù)：2 Pages

CHONGQING

平偉實業(yè)

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes 頁數(shù)：5 Pages

ESTEK

伊泰克電子

4A, 600V?N-CHANNEL POWER MOSFET

The UTC?4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies ? RDS(ON) = 2.5? @VGS = 10 V \n? Ultra Low Gate Charge ( typical 15 nC )?? \n? Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) \n? Fast Switching Capability \n? Avalanche Energy Specified \n? Improved dv/dt Capability, high Ruggedness;

UTC

友順

絲?。?strong>4N60；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.9839 Mbytes 頁數(shù)：11 Pages

RECTRON

麗正國際

絲?。?strong>4N60；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.9839 Mbytes 頁數(shù)：11 Pages

RECTRON

麗正國際

絲?。?strong>4N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.9839 Mbytes 頁數(shù)：11 Pages

RECTRON

麗正國際