| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：4N60；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.9839 Mbytes 頁(yè)數(shù)：11 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?strong>4N60；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.9839 Mbytes 頁(yè)數(shù)：11 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲印：4N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.9839 Mbytes 頁(yè)數(shù)：11 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?strong>4N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.9839 Mbytes 頁(yè)數(shù)：11 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲印：4N60CAD；Package：TO-252-2L；4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：411.7 Kbytes 頁(yè)數(shù)：12 Pages | SILAN 士蘭微 | SILAN | ||
絲印：4N60CAMJ；Package：TO-251J-3L；4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：411.7 Kbytes 頁(yè)數(shù)：12 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/4n60camn/marking.html">4N60CAMN；Package：TO-251N-3L；4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：411.7 Kbytes 頁(yè)數(shù)：12 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/4n60at/marking.html">4N60AT；Package：TO-220AB；4A 600V N-channel enhanced field effect transistor 文件：1.06546 Mbytes 頁(yè)數(shù)：7 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲印：4N60AF；Package：TO-220F；4A 600V N-channel enhanced field effect transistor 文件：1.06546 Mbytes 頁(yè)數(shù)：7 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲印：4N60AS；Package：TO-263；4A 600V N-channel enhanced field effect transistor 文件：1.06546 Mbytes 頁(yè)數(shù)：7 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ENDRIVE(常州能動(dòng)) |
2447 |
插件 |
105000 |
17個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
ENDRIVE(常州能動(dòng)) |
2021+ |
插件 |
685 |
詢價(jià) | |||
ENDRIVE |
23+ |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | |||
24+ |
N/A |
60000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
亞成微 |
25+ |
TSSOP20 |
7500 |
亞成微全系列在售 |
詢價(jià) | ||
AMD |
24+ |
5000 |
公司存貨 |
詢價(jià) | |||
AMD |
2023+ |
PLCC |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
HammondManufacturing |
新 |
7 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Hammond Manufacturing |
2022+ |
3 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Hammond |
2020+ |
N/A |
155 |
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